^>e.mi-c.ond\jlc.toi , one.. 20 stern ave. springfield, new jersey 07081 u.s.a. npn power transistors .complementary to the d43c series telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 D42C series 30-80 volts 3 amp, 12.5 watts features: ? high free-air power dissipation ? npn complement to d43c pnp ? low collector saturation voltage (0.5v typ. @ 3.0a lc) ? excellent linearity ? fast switching case style to-202 dimensions are in inches and (miuimetf rs) type to-jm term. 1 emitter term. 2 collector tebm. 3 base tab collect:; maximum ratings (ta = 25c) (unless otherwise specified) rating collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous peakd) bass current ? continuous total power dissipation @ ta = 25 c @tc = 25c operating and storage junction temperature range symbol vceo vces vebo "c icm ib pd tj,tstg 04201,2, 3 30 40 5 3 5 2 2.1 12.5 -ssto+150 D42C4, 5, 6 45 55 5 3 5 2 2.1 12.5 -55 to +150 D42C7, 8, 9 60 70 5 3. 5 2 2.1 12.5 -55 to +150 D42C10, 11, 12 80 90 5 3 5 2 2.1 12.5 -55 to +150 units volts volts volts a a watts c thermal characteristics' (1) pulse test pulse width = 300ms duty cycle < 2%. thermal resistance, junction to ambient thermal resistance, junction to case maximum lead temperature for soldering purposes: v4" from case for 5 seconds rfija r?jc tl 60 10 +260 60 10 +260 60 10 +260 60 10 +260 c/w ?caw ?c nj semi-concluctors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc = 25 c) (unless otherwise specified) characteristic symbol win typ max unit off characteristics*11 collector-emitter sustaining voltage D42C1.2, 3 (ic= 100ma) ' D42C4, 5, 6 D42C7, 8, 9 D42C10, 11,12 collector cutoff current (vce = rated vces) emitter cutoff current (veb = 5v) , vceo(sus) ices iebo 30 45 60 80 ? ? ? ? ? ? 10 100 volts ga m second breakdown | second breakdown with base forward biased fbsoa seefigures3&4 on characteristics'11 dc current gain d42o1 ,4,7,10 (ic = 200ma, vce = 1v) D42C2, 5, 8, 1 1 D42C3, 6, 9, 12 (lc = 1a, vce= 1v). D42C1.4, 7. 10 D42C2, 5, 8, 1 1 D42C3, 6, 9, 12 oc = 1a, ib = 100ma) D42C1.4, 7, 10 base-emitter saturation voltage (ic = 1a, ib = 100ma) hfe hfe vce(sat) vce(sat) vbe(sat) 25 100 40 10 20 20 ? ? ? ? ? ? 220 120 ? 0.5 0.5 0.5 1.3 ~ volts volts volts dynamic characteristics collector capacitance (vcb = 10v.f = 1mhz) current-gain ? bandwidth product (i c = 20ma, vce = 4v) ccbo tr ? ? ? 50 100 ? pf mhz switching characteristics resistive load delay time + rise time storage time fall time ic = 1a, ib1 = ib2 = 0.1a. vcg = 3v. tp = 25 psec td + |
